A critical look at EL2 models

Simple Measurement of 300 K Electron Capture Cross Section for El2 in GaAs

Introduction to Schramm-Loewner evolution and its application to critical systems

In this short review we look at recent advances in Schramm-Loewner Evolution (SLE) theory and its application to critical phenomena. The application of SLE goes beyond critical systems to other time dependent, scale invariant phenomena such as turbulence, sand-piles and watersheds. Through the use of SLE, the evolution of conformally invariant paths on the complex plane can be followed; hence a...

EL2-related studies in irradiated and implanted GaAs

2014 The midgap donor level EL2 is a very important defect because of the role it plays in the compensation of undoped semi-insulating GaAs. The knowledge of the exact EL2 structure becomes of even greater prime importance. We present here a review of the experimental results concerning artificial EL2 creation by electron and neutron irradiation and also ion implantation followed or not by anne...

Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band.

On the atomic configuration of EL2

2014 The atomic configuration of the EL2 defect in its stable state has been determined as an arsenic antisite defect associated with an arsenic interstitial at a next nearest neighbour site. The metastable EL2 state is tentatively assigned to an arsenic pair defect at a gallium lattice site (As-As )Ga. Revue Phys. Appl. 23 (1988) 803-807 MAI 1988, Classification Physics Abstracts 61.70 71.55 7...